| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MH1S72CPG-10 |
75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 122 |
MH28D72KLG-10 |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 123 |
MH4S64BBKG-10 |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 124 |
MH4S64BBKG-10L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 125 |
MH4S64BKG-10 |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 126 |
MH4S64BKG-10L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 127 |
MH4S64BLG-10 |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 128 |
MH4S64BLG-10 |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 129 |
MH4S72BLG-10 |
301989888-BIT (4194304 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 130 |
MH64D72KLG-10 |
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 131 |
MH8S64BBKG-10 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 132 |
MH8S64BBKG-10L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 133 |
MH8S64BMG-10 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 134 |
MH8S72BMG-10 |
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 135 |
MT16LSDT6464AG-10E |
SYNCHRONOUS DRAM MODULE |
Micron Technology |
| 136 |
MT4C4001JECG-10_883C |
1 meg x 4 DRAM fast page mode DRAM |
Austin Semiconductor |
| 137 |
MT4C4001JECG-10_IT |
1 meg x 4 DRAM fast page mode DRAM |
Austin Semiconductor |
| 138 |
MT4C4001JECG-10_XT |
1 meg x 4 DRAM fast page mode DRAM |
Austin Semiconductor |
| 139 |
MT8LSDT3264AG-10E |
SYNCHRONOUS DRAM MODULE |
Micron Technology |
| 140 |
SG-103 |
Photointerrupters(Reflective) |
Kodenshi Corp |
| 141 |
SG-103 |
Photointerrupters(Reflective) |
Kondenshi Corp |
| 142 |
SG-105 |
PHOTOINTERRUPTERS |
Kodenshi Corp |
| 143 |
SG-105 |
Photointerrupters(Reflective) |
Kondenshi Corp |
| 144 |
SG-105F |
PHOTOINTERRUPTERS |
Kodenshi Corp |
| 145 |
SG-105F |
Photointerrupters(Reflective) |
Kondenshi Corp |
| 146 |
SG-107 |
Photointerrupters(Reflective) |
Kodenshi Corp |
| 147 |
SG-107 |
Photointerrupters(Reflective) |
Kondenshi Corp |
| 148 |
SG-107F3 |
Photointerrupters(Reflective) |
Kodenshi Corp |
| 149 |
SG-107F3 |
Photointerrupters(Reflective) |
Kondenshi Corp |
| 150 |
SG-107F4 |
Photointerrupters(Reflective) |
Kodenshi Corp |
| | | |
