| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 122 |
20PM4 |
20A Single Phase Rectifier Bridge 400V |
IPRS Baneasa |
| 123 |
20PM4AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
| 124 |
2K0S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:42 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 125 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 126 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 127 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 128 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 129 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 130 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 131 |
2SK2941-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 132 |
2SK2941-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 133 |
2SK2941-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 134 |
2SK2941-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 135 |
2SK2983-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 136 |
2SK2983-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 137 |
2SK2983-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 138 |
2SK2983-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 139 |
2SK2984-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 140 |
2SK2984-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 141 |
2SK2984-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 142 |
2SK2984-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 143 |
2V030 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 47 V @ 1mA DC test current. |
NTE Electronics |
| 144 |
2V275 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 145 |
2V300 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 146 |
31GF4 |
Ultrafast Plastic Rectifier, Forward Current 3.0A, Reverse Voltage 400V |
Vishay |
| 147 |
3502 |
200 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 148 |
3502F |
200 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 149 |
3502UF |
200 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 150 |
3506 |
600 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
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