| No. |
Part Name |
Description |
Manufacturer |
| 121 |
COP8SGK5VEJ7XXX |
8-Bit CMOS ROM Based with 24k Memory, Two Comparators, and USART |
National Semiconductor |
| 122 |
COP8SGK5VEJ8 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART |
National Semiconductor |
| 123 |
COP8SGK5VEJ8XXX |
8-Bit CMOS ROM Based with 24k Memory, Two Comparators, and USART |
National Semiconductor |
| 124 |
COP8SGK5VEJ9 |
8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART |
National Semiconductor |
| 125 |
ERZA48GK502 |
Surge Absorbers - Varistor Type G |
Panasonic |
| 126 |
GK504 |
Low Current Preamplifier with Output Limiting |
Gennum Corporation |
| 127 |
GK509 |
Class A Amplifier with 2 DC Coupled Gain Blocks & Schottky Diodes |
Gennum Corporation |
| 128 |
HDSP-315G-GK500 |
10 mm and 13 mm Slim Font Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 129 |
HDSP-316G-GK500 |
10 mm and 13 mm Slim Font Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 130 |
NX6508GK51 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). |
NEC |
| 131 |
NX6508GK53 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1530 nm (typ). |
NEC |
| 132 |
NX6508GK55 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1550 nm (typ). |
NEC |
| 133 |
NX6508GK57 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). |
NEC |
| 134 |
NX6508GK59 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). |
NEC |
| | | |
