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Datasheets for GRAM

Datasheets found :: 3536
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No. Part Name Description Manufacturer
121 DS87C520-MNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
122 DS87C520-QCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
123 DS87C520-QNL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
124 DS87C520-WCL EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz Dallas Semiconductor
125 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
126 DSP56F802TA80 16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash Motorola
127 EB4 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
128 EB4 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
129 EB6 Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
130 EB6 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
131 EB7 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
132 EB8 Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) Vishay
133 EB8 HI TEMP High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) Vishay
134 F3851 Program Storage Unit Fairchild Semiconductor
135 GMS34004TK 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version Hynix Semiconductor
136 GMS34004TK Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
137 GMS34004TM Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
138 GMS34004TM 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version Hynix Semiconductor
139 GMS34004TW Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
140 GMS34004TW 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version Hynix Semiconductor
141 GMS34112TK Program memory:1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
142 GMS34112TK 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
143 GMS34112TM Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
144 GMS34112TM 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
145 GMS34112TW Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
146 GMS34112TW 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V Hynix Semiconductor
147 GMS34140TK Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
148 GMS34140TK 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
149 GMS34140TM Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer Hynix Semiconductor
150 GMS34140TM 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 10. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor


Datasheets found :: 3536
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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