| No. |
Part Name |
Description |
Manufacturer |
| 121 |
DF1B-R28FA |
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) |
Hirose Electric |
| 122 |
ESD11L5.0D |
ESD Protection Diodes with Ultra-Low Capacitance |
ON Semiconductor |
| 123 |
ESD7M5.0D |
ESD Protection Diodes with Ultra-Low Capacitance |
ON Semiconductor |
| 124 |
ESD9M5.0S |
ESD Protection Diodes with Ultra-Low Capacitance |
ON Semiconductor |
| 125 |
ESD9P5.0S |
ESD Protection Diodes with Ultra-Low Capacitance |
ON Semiconductor |
| 126 |
ESD9R3.3S |
ESD Protection Diodes with Ultra−Low Leakage |
ON Semiconductor |
| 127 |
ESDR0502B |
ESD Protection Diodes with Ultra−Low Capacitance |
ON Semiconductor |
| 128 |
FUSB2500 |
USB2.0 High-Speed OTG Transceiver with ULPI Interface |
Fairchild Semiconductor |
| 129 |
FUSB2805 |
USB 2.0 High-Speed OTG Transceiver with ULPI Interface |
Fairchild Semiconductor |
| 130 |
FX026 |
22-V Input, 10-A Integrated FET Converter with Ultra-Low Quiescent (ULQT) 28-VQFN-CLIP -10 to 85 |
Texas Instruments |
| 131 |
IRF6636 |
Low Resistance and Low Charge Along With Ultra Low Package Inductance to Reduce |
International Rectifier |
| 132 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 133 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
| 134 |
IRG4BC20SDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
International Rectifier |
| 135 |
IRG4BC20UDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
International Rectifier |
| 136 |
IRG4BC30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
International Rectifier |
| 137 |
IRG4BC30KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
International Rectifier |
| 138 |
IRG4IBC30F |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
| 139 |
IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
International Rectifier |
| 140 |
IRG4PH30 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
International Rectifier |
| 141 |
IRG4PH50 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) |
International Rectifier |
| 142 |
IRG4PSH71 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
International Rectifier |
| 143 |
IRG4RC10 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) |
International Rectifier |
| 144 |
IRG7PH28UD1 |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode |
International Rectifier |
| 145 |
IRG7PH28UD1PBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode |
International Rectifier |
| 146 |
IRG7PH35UD |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode |
International Rectifier |
| 147 |
IRG7PH35UD-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode |
International Rectifier |
| 148 |
IRG7PH35UD1 |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode |
International Rectifier |
| 149 |
IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode |
International Rectifier |
| 150 |
IRG7PH35UD1M |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode For Induction Heating and Soft Switching Applications |
International Rectifier |
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