No. |
Part Name |
Description |
Manufacturer |
121 |
CM300HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
122 |
CM300HA-12H |
Single IGBTMOD 300 Amperes/600 Volts |
Powerex Power Semiconductors |
123 |
CM300HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
124 |
CM300HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
125 |
CM300HA-24H |
Single IGBTMOD 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
126 |
CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts |
Powerex Power Semiconductors |
127 |
CM400HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
128 |
CM400HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
129 |
CM400HA-12H |
Single IGBTMOD 400 Amperes/600 Volts |
Powerex Power Semiconductors |
130 |
CM400HA-24 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
131 |
CM400HA-24 |
Single IGBTMOD 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
132 |
CM400HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
133 |
CM400HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
134 |
CM400HA-24H |
Single IGBTMOD 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
135 |
CM400HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
136 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
137 |
CM400HA-28H |
Single IGBTMOD 400 Amperes/1400 Volts |
Powerex Power Semiconductors |
138 |
CM400HA-34H |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
139 |
CM400HA-34H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
140 |
CM400HA-34H |
Single IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
141 |
CM450HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
142 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
143 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
144 |
CM600HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
145 |
CM600HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
146 |
CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
147 |
CM600HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
148 |
CM600HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
149 |
CM600HA-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
150 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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