| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BXY22H |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 122 |
BXY22J |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 123 |
BXY22J |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 124 |
BXY23 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 125 |
BXY23 |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 126 |
BXY24EA |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 127 |
BXY43A |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 128 |
BXY43B |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 129 |
BXY43B |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 130 |
BXY43C |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 131 |
BXY43C |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 132 |
BXY44E |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 133 |
BXY44E |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 134 |
BXY58EA |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 135 |
BXY58EA |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 136 |
BXY59D |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 137 |
BXY59D |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 138 |
CA04-41GWA |
The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 139 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 140 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 141 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 142 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 143 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 144 |
GD100-GE100-SERIES |
General information about the GD 100 and GE 100 series |
Siemens |
| 145 |
GEA-M1003 |
the GE ECM 142 Series Motors |
General Semiconductor |
| 146 |
IR11867-E01 |
PROVISIONAL SPECIFICATION FOR THE GENERIC DOL POWER MODULE |
International Rectifier |
| 147 |
L-53CGCK |
The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode |
Kingbright Electronic |
| 148 |
Q62702-F788 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 149 |
TAA550 |
Temperature compensated stabilization circuits - the German version |
ITT Semiconductors |
| 150 |
TC1410 |
The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. T |
Microchip |
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