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Datasheets for I-10

Datasheets found :: 339
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 HI-8588PDI-10 ARINC 429 LINE RECEIVER Holt Integrated Circuits
122 HI-8588PSI-10 ARINC 429 LINE RECEIVER Holt Integrated Circuits
123 HI-8683PJI-10 System component for interfacing incoming ARINC 429 signals to 8-bit parallel data Holt Integrated Circuits
124 HI-8683PSI-10 System component for interfacing incoming ARINC 429 signals to 8-bit parallel data Holt Integrated Circuits
125 HI-8684PJI-10 ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA Holt Integrated Circuits
126 HI-8684PSI-10 ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA Holt Integrated Circuits
127 HI-8685PJI-10 ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 16-BIT PARALLEL DATA Holt Integrated Circuits
128 HI-8685PSI-10 ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 16-BIT PARALLEL DATA Holt Integrated Circuits
129 HM6264BLFPI-10T 64k SRAM (8-kword x 8-bit) Wide Temperature Range version Hitachi Semiconductor
130 HM6264BLPI-10 64k SRAM (8-kword x 8-bit) Wide Temperature Range version Hitachi Semiconductor
131 HN58V65AFPI-10 Memory>EEPROM>Parallel EEPROM Renesas
132 HN58V65AFPI-10E Memory>EEPROM>Parallel EEPROM Renesas
133 HN58V65API-10 Memory>EEPROM>Parallel EEPROM Renesas
134 HN58V65API-10E Memory>EEPROM>Parallel EEPROM Renesas
135 HN58V65ATI-10 Memory>EEPROM>Parallel EEPROM Renesas
136 HN58V65ATI-10E Memory>EEPROM>Parallel EEPROM Renesas
137 HN58V66AFPI-10 Memory>EEPROM>Parallel EEPROM Renesas
138 HN58V66AFPI-10E Memory>EEPROM>Parallel EEPROM Renesas
139 HN58V66API-10 Memory>EEPROM>Parallel EEPROM Renesas
140 HN58V66API-10E Memory>EEPROM>Parallel EEPROM Renesas
141 HN58V66ATI-10 Memory>EEPROM>Parallel EEPROM Renesas
142 HN58V66ATI-10E Memory>EEPROM>Parallel EEPROM Renesas
143 ICS8432I-101 700MHz, Low Phase Noise, Differential-to-3.3V LVPECL Frequency Synthesizer Texas Instruments
144 ICS8432I-101 700MHz, Low Phase Noise, Differential-to-3.3V LVPECL Frequency Synthesizer Texas Instruments
145 KM6164000BLRI-10L 256Kx16 bit Low Power CMOS Static RAM Samsung Electronic
146 KM6164000BLTI-10L 256Kx16 bit Low Power CMOS Static RAM Samsung Electronic
147 KM616FS4110ZI-10 100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM Samsung Electronic
148 KM62256CLGI-10 32Kx8 bit Low Power CMOS Static RAM Samsung Electronic
149 KM62256CLGI-10L 32Kx8 bit Low Power CMOS Static RAM Samsung Electronic
150 KM62256CLRGI-10 32Kx8 bit Low Power CMOS Static RAM Samsung Electronic


Datasheets found :: 339
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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