| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 122 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 123 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 124 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 125 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 126 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 127 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 128 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 129 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 130 |
2SC3515 |
Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 131 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
| 132 |
2SC780AG |
Silicon NPN triple diffused planar transistor, Nixie tube driver, high voltage switching applications |
TOSHIBA |
| 133 |
2W005G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 134 |
2W01G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 135 |
2W02G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 136 |
2W04G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 137 |
2W06G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 138 |
2W08G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 139 |
2W10G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 140 |
4BYP401 |
Mostek prostowniczy w uk�adzie Graetza |
Ultra CEMI |
| 141 |
4BYP680 |
Mostek prostowniczy w uk�adzie Graetza |
Ultra CEMI |
| 142 |
5962-9466902Q9B |
Floating-Point Digital Signal Processors, Military Known Good Die 0-XCEPT -55 to 125 |
Texas Instruments |
| 143 |
8AF05 |
50V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 144 |
8AF1 |
100V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 145 |
8AF2 |
200V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 146 |
8AF4 |
400V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 147 |
8AF4NPP |
400V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 148 |
8AF4RPP |
400V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
International Rectifier |
| 149 |
AD534S |
Space Qualified Die Document |
Analog Devices |
| 150 |
AD565S |
Space Qualified Die Document |
Analog Devices |
| | | |
