No. |
Part Name |
Description |
Manufacturer |
121 |
12F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
122 |
12F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
123 |
12F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
124 |
12F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
125 |
12F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
126 |
12F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
127 |
12F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
128 |
12F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
129 |
12F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
130 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
131 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
132 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
133 |
140 CLH |
Aluminum Capacitors, SMD (Chip), High Temperature |
Vishay |
134 |
140CLH |
Aluminum Capacitors SMD (Chip), High Temperature |
Vishay |
135 |
140RTM |
Aluminum Capacitors Radial, High Temperature Miniature |
Vishay |
136 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
137 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
138 |
1460 |
Operational Amplifier - High Speed / VMOS Output |
TelCom Semiconductor |
139 |
148 RUS |
Aluminum Capacitors, Radial, Ultra High CV per Volume, Semi-Professional |
Vishay |
140 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
141 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
142 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
143 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
144 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
145 |
150KR100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
146 |
150KR20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
147 |
150KR40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
148 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
149 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
150 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
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