| No. |
Part Name |
Description |
Manufacturer |
| 121 |
ATA121302 |
The ATA121302D1C is a 1.25 Gb/s Transimpedence amplifier possessing automatic gain control. |
Anadigics Inc |
| 122 |
AUIR0815S |
Buffer gate driver family, in conjunction with a predriver stage, is suited to drive a single half bridge in power switching applications. |
International Rectifier |
| 123 |
AUIR0815STR |
Buffer gate driver family, in conjunction with a predriver stage, is suited to drive a single half bridge in power switching applications. |
International Rectifier |
| 124 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 125 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 126 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 127 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 128 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 129 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 130 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 131 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 132 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 133 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 134 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 135 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 136 |
CGO869 |
CGO869; 870 MHz optical receiver with integrated gain control |
Philips |
| 137 |
CGO869/SC0 |
CGO869; 870 MHz optical receiver with integrated gain control |
Philips |
| 138 |
CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 139 |
CGY121A |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 140 |
CGY121B |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 141 |
CXA3001N |
RX Gain Control Amplifier |
SONY |
| 142 |
CXA3002N |
TX Gain Control Amplifier |
SONY |
| 143 |
CXA3201AN |
RX Gain Control Amplifier |
SONY |
| 144 |
CXA3201N |
RX Gain Control Amplifier |
SONY |
| 145 |
CXA3202AN |
TX Gain Control Amplifier |
SONY |
| 146 |
CXA3202N |
TX Gain Control Amplifier |
SONY |
| 147 |
CXA3221AN |
RX Gain Control Amplifier |
SONY |
| 148 |
CXA3221N |
RX Gain Control Amplifier |
SONY |
| 149 |
CXA3222AN |
TX Gain Control Amplifier |
SONY |
| 150 |
CXA3222N |
TX Gain Control Amplifier |
SONY |
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