No. |
Part Name |
Description |
Manufacturer |
121 |
K6F8016V3A-RF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
122 |
K6F8016V3A-RF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
123 |
K6F8016V3A-TF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
124 |
K6F8016V3A-TF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
125 |
M27W512-100K6F |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
126 |
M27W512-120K6F |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
127 |
M27W512-150K6F |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
128 |
M27W512-200K6F |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
129 |
M27W512-80K6F |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
130 |
STBP120AVDK6F |
Overvoltage protection device with thermal shutdown |
ST Microelectronics |
131 |
STBP120BVDK6F |
Overvoltage protection device with thermal shutdown |
ST Microelectronics |
132 |
STBP120CVDK6F |
Overvoltage protection device with thermal shutdown |
ST Microelectronics |
133 |
STBP120DVDK6F |
Overvoltage protection device with thermal shutdown |
ST Microelectronics |
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