| No. |
Part Name |
Description |
Manufacturer |
| 121 |
DTC113ZKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 122 |
DTC114EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 123 |
DTC114TKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 124 |
DTC114YKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 125 |
DTC115EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 126 |
DTC123EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 127 |
DTC123JKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 128 |
DTC123YKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 129 |
DTC124EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 130 |
DTC124XKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 131 |
DTC143EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 132 |
DTC143TKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 133 |
DTC143XKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 134 |
DTC143ZKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 135 |
DTC144EKAT146 |
NPN Digital transistor (with built-in resistors) |
ROHM |
| 136 |
ECC803S |
NF DOPPELTRIODE MIT GETRENNTEN KATHODEN AF TWIN TRIODE WITH SEPARATE CATHODES |
Vishay |
| 137 |
KATC-0814 |
Wide Band PIN Diode Attenuator |
etc |
| 138 |
LP5910-1.8YKAT |
300-mA Ultra-Low-Noise LDO for RF and Analog Circuits 4-DSBGA -40 to 125 |
Texas Instruments |
| 139 |
MAX31850KATB+ |
Cold-Junction Compensated, 1-Wire Thermocouple-to-Digital Converters |
MAXIM - Dallas Semiconductor |
| 140 |
MAX31850KATB+T |
Cold-Junction Compensated, 1-Wire Thermocouple-to-Digital Converters |
MAXIM - Dallas Semiconductor |
| 141 |
MAX6725AKATGD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 142 |
MAX6725KATED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 143 |
MAX6725KATGD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 144 |
MAX6725KATGD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 145 |
MAX6725KATGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 146 |
MAX6725KATID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 147 |
MAX6725KATWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 148 |
MAX6725KATZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 149 |
MAX6726AKATGD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 150 |
MAX6726KATED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| | | |
