No. |
Part Name |
Description |
Manufacturer |
121 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
122 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
123 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
124 |
KM416C1004BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
125 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
126 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
127 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
128 |
KM416C1004BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
129 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
130 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
131 |
KM416C1004BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
132 |
KM416C1004BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
133 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
134 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
135 |
KM416C1004BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
136 |
KM416C1004BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
137 |
KM416C1004BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
138 |
KM416C1004C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
139 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
140 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
141 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
142 |
KM416C1004CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
143 |
KM416C1004CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
144 |
KM416C1004CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
145 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
146 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
147 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
148 |
KM416C1004CT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
149 |
KM416C1004CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
150 |
KM416C1004CT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
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