No. |
Part Name |
Description |
Manufacturer |
121 |
2N4867 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
122 |
2N4867 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
123 |
2N4867A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
124 |
2N4867A |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
125 |
2N4868 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
126 |
2N4868 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
127 |
2N4868A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
128 |
2N4868A |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
129 |
2N4869 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
130 |
2N4869 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
131 |
2N4869A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
132 |
2N4869A |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
133 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
134 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
135 |
2N4953 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
136 |
2N5020 |
P-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
137 |
2N5020 |
P-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
138 |
2N5021 |
P-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
139 |
2N5021 |
P-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
140 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
141 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
142 |
2N5114 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
143 |
2N5115 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
144 |
2N5116 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
145 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
146 |
2N5397 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
147 |
2N5397 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
148 |
2N5398 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
149 |
2N5398 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
150 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
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