No. |
Part Name |
Description |
Manufacturer |
121 |
RL256 |
2.5A GENERAL DIODES |
Leshan Radio Company |
122 |
RL256 |
2.5A, 800V ultra fast recovery rectifier |
MCC |
123 |
RL256 |
2.5 Amp Silicon Rectifier 50 to 1000 Volts |
Micro Commercial Components |
124 |
RL256 |
SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.5 Amperes) |
Rectron Semiconductor |
125 |
RL256G |
GLASS PASSIVATED JUNCTION RECTIFIER |
GOOD-ARK Electronics |
126 |
RL256GP |
2.5A, 800V ultra fast recovery rectifier |
MCC |
127 |
RL256GP |
2.5 Amp Glass Passivated Rectifier 50-1000 Volts |
Micro Commercial Components |
128 |
RL256M |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
129 |
S29GL512N, S29GL256N, S29GL128N |
512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology |
Advanced Micro Devices |
130 |
T14L256A |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
131 |
T14L256A-8J |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
132 |
T14L256A-8J |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
133 |
T14L256A-8P |
32K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
134 |
T14L256A-8P |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
135 |
T15L256A |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
136 |
T15L256A-35J |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
137 |
T15L256A-35J |
35ns; -0.5 to 4.6V; 0.5W; 32 x 8 high speed CMOS static RAM |
TM Technology |
138 |
T15L256A-70D |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
139 |
T15L256A-70D |
70ns; -0.5 to 4.6V; 0.5W; 32 x 8 high speed CMOS static RAM |
TM Technology |
140 |
T15L256A-70P |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
141 |
T15L256A-70P |
70ns; -0.5 to 4.6V; 0.5W; 32 x 8 high speed CMOS static RAM |
TM Technology |
142 |
UT61L256CJC-10 |
Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
143 |
UT61L256CJC-12 |
Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
144 |
UT61L256CJC-15 |
Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
145 |
UT61L256CLS-10 |
Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
146 |
UT61L256CLS-12 |
Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
147 |
UT61L256CLS-15 |
Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM |
UTRON Technology |
148 |
UT61L256JC-10 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
149 |
UT61L256JC-12 |
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
150 |
UT61L256JC-15 |
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM |
UTRON Technology |
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