No. |
Part Name |
Description |
Manufacturer |
121 |
M381L3223FTM-CLB3A2 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
122 |
M381L6423ETM-CLB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
123 |
M381L6423FTM-CLB3B0 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
124 |
M470L2923BN0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
125 |
M470L2923BNV0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
126 |
M470L3223DT0-CLB3 |
256MB DDR SDRAM MODULE |
Samsung Electronic |
127 |
M470L3324BT0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
128 |
M470L3324BTU0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
129 |
M470L3324CU0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
Samsung Electronic |
130 |
M470L6423EN0-CLB3 |
512MB Unbuffered SODIMM(based on sTSOP) |
Samsung Electronic |
131 |
M470L6524BT0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
132 |
M470L6524BTU0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
133 |
M470L6524CU0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die |
Samsung Electronic |
134 |
MAX16033LLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
135 |
MAX16033LLB31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
136 |
MAX16033PLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
137 |
MAX16033PLB31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
138 |
MAX16034LLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
139 |
MAX16034LLB31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
140 |
MAX16035PLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
141 |
MAX16035PLB31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
142 |
MAX16036LLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
143 |
MAX16036LLB31+T |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
144 |
MAX16036PLB31+ |
Low-Power Battery-Backup Circuits in Small µDFN Packages |
MAXIM - Dallas Semiconductor |
145 |
MTLB3135-Y |
0.35 Light Bar |
Marktech Optoelectronics |
146 |
MTLB3150-Y |
0.5 Light Bar |
Marktech Optoelectronics |
147 |
MTLB3160-Y |
0.53 Light Bar |
Marktech Optoelectronics |
148 |
MTLB3175-Y |
0.75 Light Bar |
Marktech Optoelectronics |
149 |
NX8562LB303-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. Anode ground. FC-PC connector. |
NEC |
150 |
NX8562LB311-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1531.11 nm. Frequency 195.80 THz. Anode ground. FC-PC connector. |
NEC |
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