| No. |
Part Name |
Description |
Manufacturer |
| 121 |
LF412MJ8 |
Dual Precision JFET Input Operational Amplifiers |
Linear Technology |
| 122 |
LF412MW8 |
Low Offset, Low Drift Dual JFET Input Operational Amplifier |
National Semiconductor |
| 123 |
LF412MWC |
Low Offset, Low Drift Dual JFET Input Operational Amplifier |
National Semiconductor |
| 124 |
LF412QML |
Low Offset, Low Drift Dual JFET Input Operational Amplifier |
Texas Instruments |
| 125 |
MAB411A |
Operational amplifier with JFET inputs, equivalent LF411ACN |
Tesla Elektronicke |
| 126 |
MAB412A |
Dual operational amplifier with JFET inputs, equivalent LF412ACN |
Tesla Elektronicke |
| 127 |
MAC411A |
Operational amplifier with JFET inputs, equivalent LF411AMH |
Tesla Elektronicke |
| 128 |
MAC412A |
Dual operational amplifier with JFET inputs, equivalent LF412AMH |
Tesla Elektronicke |
| 129 |
NX8562LF413-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1541.34 nm. Frequency 194.50 THz. Anode floating. FC-PC connector. |
NEC |
| 130 |
NX8563LF413-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1541.34 nm. Frequency 194.50 THz. FC-PC connector. Anode floating. |
NEC |
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