| No. |
Part Name |
Description |
Manufacturer |
| 121 |
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 122 |
ATF-45100 |
2-12 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 123 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 124 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 125 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 126 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 127 |
ATF-46100 |
2-14 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 128 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 129 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 130 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 131 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 132 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 133 |
ATF10236 |
0.5?12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 134 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 135 |
ATF13786 |
Surface Mount Gallium Arsenide FET for Oscillators |
Agilent (Hewlett-Packard) |
| 136 |
ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 137 |
BLV30 |
VHF Linear Power NPN Transistor, warning - device incorporates beryllium oxide, the dust of which is toxic |
Philips |
| 138 |
CA04-41GWA |
The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 139 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 140 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 141 |
CAY10 |
Gallium arsenide varactor diode |
VALVO |
| 142 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 143 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 144 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 145 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 146 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 147 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 148 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 149 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
| 150 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
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