| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 122 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 123 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 124 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 125 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 126 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 127 |
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) |
Isahaya Electronics Corporation |
| 128 |
2SA1811 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS |
TOSHIBA |
| 129 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 130 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 131 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 132 |
2SA2119K |
Low frequency transistor |
ROHM |
| 133 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 134 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 135 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 136 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 137 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 138 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 139 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 140 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 141 |
2SA642 |
LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 142 |
2SA643 |
Transistors LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 143 |
2SA671 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 144 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 145 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 146 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 147 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 148 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 149 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 150 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| | | |
