No. |
Part Name |
Description |
Manufacturer |
121 |
1N3820 |
1.5W Zener Diode low silhouette single-ended package |
Motorola |
122 |
1N3820A |
1.5W Zener Diode low silhouette single-ended package |
Motorola |
123 |
1N3820B |
1.5W Zener Diode low silhouette single-ended package |
Motorola |
124 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
125 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
126 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
127 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
128 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
129 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
130 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
131 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
132 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
133 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
134 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
135 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
136 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
137 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
138 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
139 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
140 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
141 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
142 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
143 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
144 |
2N525 |
Germanium transistor, amplification and low speed switching |
COSEM |
145 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
146 |
2N527 |
Germanium transistor, amplification and low speed switching |
COSEM |
147 |
2SA1359 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) LOW SPEED SWITCHING AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
148 |
2SA1897 |
20 V, 5 A, PNP ultra-low saturation voltage transistor |
NEC |
149 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
150 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
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