No. |
Part Name |
Description |
Manufacturer |
121 |
M368L6423ETM-CCC4 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
122 |
M381L2923CUM-CCC |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
123 |
M381L3223DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
124 |
M381L3223DTM-CCC/C4 |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
125 |
M381L3223ETM-CB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
126 |
M381L3223ETM-CCC4 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
127 |
M381L3223ETM-CLB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
128 |
M381L3223FTM-CLB3A2 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
129 |
M381L5623MTM-CA2 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
130 |
M381L5623MTM-CB0 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
131 |
M381L5623MTM-CB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
132 |
M381L6423DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
133 |
M381L6423DTM-CCC/C4 |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
134 |
M381L6423ETM-CB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
135 |
M381L6423ETM-CC4 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
136 |
M381L6423ETM-CC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC |
Samsung Electronic |
137 |
M381L6423ETM-CLB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
138 |
M381L6423FTM-CLB3B0 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
139 |
M381L6523CUM-CLCC |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
140 |
M65761FP |
QM-CODER |
Mitsubishi Electric Corporation |
141 |
M65762FP |
QM-CODER |
Mitsubishi Electric Corporation |
142 |
MAX1324ECM-C1W |
8-/4-/2-Channel, 14-Bit, Simultaneous-Sampling ADCs with ±10V, ±5V, and 0 to +5V Analog Input Ranges |
MAXIM - Dallas Semiconductor |
143 |
MD3467 |
Dual PNP silicon medium-current annular transistors |
Motorola |
144 |
MD3467F |
Dual PNP silicon medium-current annular transistors, TO-89 case |
Motorola |
145 |
MM3726 |
PNP silicon annular transistor designed for medium-current, complementary NPN MM3725 |
Motorola |
146 |
MP1613 |
Medium-current germanium PNP power transistor, designed for use in 12 Volt vertical deflection circuits in television receivers |
Motorola |
147 |
MQ3467 |
Quad PNP silicon medium-current annular transistors, TO-86 case |
Motorola |
148 |
MR1120 |
12A 50V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, cathode-to-case |
Motorola |
149 |
MR1120R |
12A 50V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, anode-to-case |
Motorola |
150 |
MR1121 |
12A 100V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, cathode-to-case |
Motorola |
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