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Datasheets for M-C

Datasheets found :: 242
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 M368L6423ETM-CCC4 DDR SDRAM Unbuffered Module Samsung Electronic
122 M381L2923CUM-CCC DDR SDRAM Unbuffered Module Samsung Electronic
123 M381L3223DTM-CCC 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC Samsung Electronic
124 M381L3223DTM-CCC/C4 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC Samsung Electronic
125 M381L3223ETM-CB3 DDR SDRAM Unbuffered Module Samsung Electronic
126 M381L3223ETM-CCC4 DDR SDRAM Unbuffered Module Samsung Electronic
127 M381L3223ETM-CLB3 DDR SDRAM Unbuffered Module Samsung Electronic
128 M381L3223FTM-CLB3A2 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC Sanken
129 M381L5623MTM-CA2 DDR SDRAM Unbuffered Module Samsung Electronic
130 M381L5623MTM-CB0 DDR SDRAM Unbuffered Module Samsung Electronic
131 M381L5623MTM-CB3 DDR SDRAM Unbuffered Module Samsung Electronic
132 M381L6423DTM-CCC 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC Samsung Electronic
133 M381L6423DTM-CCC/C4 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC Samsung Electronic
134 M381L6423ETM-CB3 DDR SDRAM Unbuffered Module Samsung Electronic
135 M381L6423ETM-CC4 DDR SDRAM Unbuffered Module Samsung Electronic
136 M381L6423ETM-CC5 184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC Samsung Electronic
137 M381L6423ETM-CLB3 DDR SDRAM Unbuffered Module Samsung Electronic
138 M381L6423FTM-CLB3B0 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC Sanken
139 M381L6523CUM-CLCC DDR SDRAM Unbuffered Module Samsung Electronic
140 M65761FP QM-CODER Mitsubishi Electric Corporation
141 M65762FP QM-CODER Mitsubishi Electric Corporation
142 MAX1324ECM-C1W 8-/4-/2-Channel, 14-Bit, Simultaneous-Sampling ADCs with ±10V, ±5V, and 0 to +5V Analog Input Ranges MAXIM - Dallas Semiconductor
143 MD3467 Dual PNP silicon medium-current annular transistors Motorola
144 MD3467F Dual PNP silicon medium-current annular transistors, TO-89 case Motorola
145 MM3726 PNP silicon annular transistor designed for medium-current, complementary NPN MM3725 Motorola
146 MP1613 Medium-current germanium PNP power transistor, designed for use in 12 Volt vertical deflection circuits in television receivers Motorola
147 MQ3467 Quad PNP silicon medium-current annular transistors, TO-86 case Motorola
148 MR1120 12A 50V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, cathode-to-case Motorola
149 MR1120R 12A 50V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, anode-to-case Motorola
150 MR1121 12A 100V Medium-current silicon rectifier feature high surge current capacity, and low forward voltage drop, cathode-to-case Motorola


Datasheets found :: 242
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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