| No. |
Part Name |
Description |
Manufacturer |
| 121 |
DS4E-M-DC6V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 122 |
DS4E-M-DC9V |
HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY |
Matsushita Electric Works(Nais) |
| 123 |
DS5003M-DNS+ |
Secure Microprocessor Chip |
MAXIM - Dallas Semiconductor |
| 124 |
HC1E-HTM-DC110V |
Amber HCE-relay. Miniature relay for wide applications. 1 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 125 |
HC1HTM-DC110V |
HC-relay. Miniature relay for wide applications. 1 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 126 |
HC2E-HTM-DC110V |
Amber HCE-relay. Miniature relay for wide applications. 2 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 127 |
HC2HTM-DC110V |
HC-relay. Miniature relay for wide applications. 2 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 128 |
HC3HTM-DC110V |
HC-relay. Miniature relay for wide applications. 3 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 129 |
HC4DHTM-DC110V |
HC-relay. Miniature relay for wide applications. 4 form C. Coil voltage 110 V DC. Top mounting. Bifurcated contact type. |
Matsushita Electric Works(Nais) |
| 130 |
HC4E-HTM-DC110V |
Amber HCE-relay. Miniature relay for wide applications. 4 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 131 |
HC4ED-HTM-DC110V |
Amber HCE-relay. Miniature relay for wide applications. 4 form C. Coil voltage 110 V DC. Top mounting. Bifurcated contact type. |
Matsushita Electric Works(Nais) |
| 132 |
HC4HTM-DC110V |
HC-relay. Miniature relay for wide applications. 4 form C. Coil voltage 110 V DC. Top mounting. Standard type. |
Matsushita Electric Works(Nais) |
| 133 |
HL1HTM-DC110V |
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V AC, 10 A 250 V AC. Top mounting. Coil voltage 110 V DC. |
Matsushita Electric Works(Nais) |
| 134 |
HL2HTM-DC110V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Top mounting. Coil voltage 110 V DC. |
Matsushita Electric Works(Nais) |
| 135 |
HP2-TM-DC110V |
HP-relay. 10 Amp power relay. 2 form C. Coil voltage 110 V DC. Top mounting type. |
Matsushita Electric Works(Nais) |
| 136 |
HP3-M-DC110V |
HP-relay. 10 Amp power relay. 3 form C. Coil voltage 110 V DC. Direct mounting type. |
Matsushita Electric Works(Nais) |
| 137 |
IS44A |
44-Lead, Hermetic, Dual-In-Line, Custom, ISPMCM-DC Package |
National Semiconductor |
| 138 |
IS68A |
68-Lead, Hermetic, Dual-In-Line, Custom, ISPMCM-DC Package |
National Semiconductor |
| 139 |
IS68B |
68-Lead, Hermetic, Surface Mount, Custom, ISPMCM-DC Package |
National Semiconductor |
| 140 |
JR1AF-TM-DC12V |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
| 141 |
JR1AF-TM-DC24V |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
| 142 |
JR1AF-TM-DC48V |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
| 143 |
JR1AF-TM-DC5V |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
| 144 |
JR1AF-TM-DC6V |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
| 145 |
K4H1G0438M |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
| 146 |
K4H1G0438M-TC/LA2 |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
| 147 |
K4H1G0438M-TC/LB0 |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
| 148 |
K4H1G0438M-TC/LB3 |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
| 149 |
K4H1G0838M-TC/LA2 |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
| 150 |
K4H1G0838M-TC/LB0 |
1Gb M-die DDR SDRAM Specification |
Samsung Electronic |
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