DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for M416

Datasheets found :: 486
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
122 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
123 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
124 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
125 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
126 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
127 KM416C254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
128 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
129 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
130 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
131 KM416C254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
132 KM416C254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
133 KM416C254DJL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
134 KM416C254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
135 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
136 KM416C254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
137 KM416C254DTL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
138 KM416C254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
139 KM416C254DTL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
140 KM416C256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
141 KM416C256DJ-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V Samsung Electronic
142 KM416C256DJ-6 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V Samsung Electronic
143 KM416C256DJ-7 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V Samsung Electronic
144 KM416C256DLJ-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Samsung Electronic
145 KM416C256DLJ-6 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability Samsung Electronic
146 KM416C256DLJ-7 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability Samsung Electronic
147 KM416C256DLT-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Samsung Electronic
148 KM416C256DLT-6 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability Samsung Electronic
149 KM416C256DLT-7 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability Samsung Electronic
150 KM416C256DT-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V Samsung Electronic


Datasheets found :: 486
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



© 2024 - www Datasheet Catalog com