No. |
Part Name |
Description |
Manufacturer |
121 |
HM6116P-4 |
2048-word X 8bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
122 |
HM6167LP-6 |
16384-word x 1-bit high speed CMOS static RAM, 85ns |
Hitachi Semiconductor |
123 |
HM6167LP-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
124 |
HM6167P-6 |
16384-word x 1-bit high speed CMOS static RAM, 85ns |
Hitachi Semiconductor |
125 |
HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
126 |
KM611001 |
1M x 1Bit High-Speed CMOS SRAM |
Samsung Electronic |
127 |
KM611001L |
1M x 1Bit High-Speed CMOS SRAM |
Samsung Electronic |
128 |
KM6161002A |
CMOS SRAM |
Samsung Electronic |
129 |
KM6161002B |
CMOS SRAM |
Samsung Electronic |
130 |
KM6161002C |
CMOS SRAM |
Samsung Electronic |
131 |
KM6164000B |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
132 |
KM6164000BL-L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
133 |
KM6164000BLI-L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
134 |
KM6164000BLR-5L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
135 |
KM6164000BLR-7L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
136 |
KM6164000BLRI-10L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
137 |
KM6164000BLRI-7L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
138 |
KM6164000BLT-5L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
139 |
KM6164000BLT-7L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
140 |
KM6164000BLTI-10L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
141 |
KM6164000BLTI-7L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
142 |
KM6164002 |
CMOS SRAM |
Samsung Electronic |
143 |
KM6164002E |
CMOS SRAM |
Samsung Electronic |
144 |
KM6164002I |
CMOS SRAM |
Samsung Electronic |
145 |
KM616FS4110ZI-10 |
100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
146 |
KM616FS4110ZI-7 |
70ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
147 |
LM61 |
2.7V, SOT-23 or TO-92 Temperature Sensor |
National Semiconductor |
148 |
LM61 |
2.7V, SOT-23 or TO-92 Temperature Sensor |
Texas Instruments |
149 |
LM6104 |
Quad Gray Scale Current Feedback Amplifier |
National Semiconductor |
150 |
LM6104M |
Quad Gray Scale Current Feedback Amplifier |
National Semiconductor |
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