| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 122 |
2N4427 |
Transmitting transistor NPN |
mble |
| 123 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
| 124 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 125 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 126 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 127 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 128 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 129 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 130 |
2N5155 |
PNP Germanium power transistor, collector-emitter sustaining voltage capability |
Motorola |
| 131 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 132 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 133 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 134 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 135 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 136 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 137 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 138 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 139 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
| 140 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
| 141 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 142 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 143 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 144 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 145 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 146 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 147 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 148 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 149 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
| 150 |
2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
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