| No. |
Part Name |
Description |
Manufacturer |
| 121 |
HMC158C8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT |
Hittite Microwave Corporation |
| 122 |
HMC187MS8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 0.85 - 2.0 GHz INPUT |
Hittite Microwave Corporation |
| 123 |
HMC188MS8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.25 - 3.0 GHz INPUT |
Hittite Microwave Corporation |
| 124 |
HMC189MS8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 2 - 4 GHz INPUT |
Hittite Microwave Corporation |
| 125 |
HMC204C8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT |
Hittite Microwave Corporation |
| 126 |
HMC204MS8 |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER/ 4 - 8 GHz INPUT |
Hittite Microwave Corporation |
| 127 |
HMC204MS8G |
GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 4 - 8 GHz INPUT |
Hittite Microwave Corporation |
| 128 |
HMC374 |
SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz |
Hittite Microwave Corporation |
| 129 |
HMC516LC5 |
SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz |
Hittite Microwave Corporation |
| 130 |
HSDL-4400 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 131 |
HSDL-4420 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 132 |
HSDL-5400 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 133 |
HSDL-5420 |
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package |
Agilent (Hewlett-Packard) |
| 134 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 135 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 136 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 137 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 138 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 139 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 140 |
IRF6727M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 141 |
IRF6727MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 142 |
IRF6727MTRPBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. |
International Rectifier |
| 143 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 144 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 145 |
MOS6020 |
SMT Power Inductor |
etc |
| 146 |
MOS6020-103MXB |
SMT Power Inductor |
etc |
| 147 |
MOS6020-103MXC |
SMT Power Inductor |
etc |
| 148 |
MOS6020-103MXD |
SMT Power Inductor |
etc |
| 149 |
MOS6020-104MXB |
SMT Power Inductor |
etc |
| 150 |
MOS6020-104MXC |
SMT Power Inductor |
etc |
| | | |
