No. |
Part Name |
Description |
Manufacturer |
121 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
122 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
123 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
124 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
125 |
1S84 |
Silicon Diffused Rectifier |
Hitachi Semiconductor |
126 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
127 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
128 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
129 |
1Z100 |
Silicon diffused type zener diode. Typ zener voltage 100 V. |
Panasonic |
130 |
1Z110 |
Silicon diffused type zener diode. Typ zener voltage 110 V. |
Panasonic |
131 |
1Z150 |
Silicon diffused type zener diode. Typ zener voltage 150 V. |
Panasonic |
132 |
1Z180 |
Silicon diffused type zener diode. Typ zener voltage 180 V. |
Panasonic |
133 |
1Z330 |
Silicon diffused type zener diode. Typ zener voltage 330 V. |
Panasonic |
134 |
1Z390 |
Silicon diffused type zener diode. Typ zener voltage 390 V. |
Panasonic |
135 |
2-BDY20 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
136 |
2-BDY38 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
137 |
22CC11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
138 |
22CD11 |
Silicon diffused junction rectifier 22A 150V |
TOSHIBA |
139 |
22FC11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
140 |
22FD11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
141 |
25CC13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
142 |
25CD13 |
Silicon diffused junction rectifier 25A 150V |
TOSHIBA |
143 |
25FC13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
144 |
25FD13 |
Silicon diffused junction rectifier 25A 300V |
TOSHIBA |
145 |
25GC12 |
Silicon diffused junction rectifier 25A 400V |
TOSHIBA |
146 |
25JC12 |
Silicon diffused junction rectifier 25A 600V |
TOSHIBA |
147 |
25LC12 |
Silicon diffused junction rectifier 25A 800V |
TOSHIBA |
148 |
25NC12 |
Silicon diffused junction rectifier 25A 1000V |
TOSHIBA |
149 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
150 |
2SD102 |
Silicon NPN diffused junction power transistor |
TOSHIBA |
| | | |