No. |
Part Name |
Description |
Manufacturer |
121 |
PSMN130-200D |
N-channel TrenchMOS(tm) transistor |
Philips |
122 |
RN1301 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
123 |
RN1302 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
124 |
RN1303 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
125 |
RN1304 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
126 |
RN1305 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
127 |
RN1306 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
128 |
RN1307 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
129 |
RN1308 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
130 |
RN1309 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
131 |
SBN13001 |
0.75W Bipolar Junction Transistor, 0.2A Ic, 400V Vceo, 700V Vces |
SemiWell Semiconductor |
132 |
SBN13003 |
1.1W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces |
SemiWell Semiconductor |
133 |
SBN13003A |
1.1W Bipolar Junction Transistor, 1.5A Ic, 400V Vceo, 700V Vces |
SemiWell Semiconductor |
134 |
T2525N130 |
IR RECEIVER ASSP |
Atmel |
135 |
T2527N130-DDW |
Low-voltage highly selective IR receiver IC. Carrier frequency 30 kHz. |
Atmel |
136 |
TC54VN1301ECBTR |
Voltage detector, Nch output, 1.3V, +/-1% |
Microchip |
137 |
TC54VN1301ECTTR |
Voltage detector, Nch open drain, 1.3V, +/-1% |
Microchip |
138 |
TC54VN1301EMBTR |
Voltage detector, Nch open drain, 1.3V, +/-1% |
Microchip |
139 |
TPN13008NH |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
140 |
VN1304 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
141 |
VN1306 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
142 |
VN1306N2 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
143 |
VN1306N3 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
144 |
XC61CN1302LB |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
145 |
XC61CN1302LH |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
146 |
XC61CN1302ML |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
147 |
XC61CN1302MR |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
148 |
XC61CN1302NL |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
149 |
XC61CN1302NR |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
150 |
XC61CN1302PL |
Low voltage detector 1.3V +/-2%, N-ch open drain |
Torex Semiconductor |
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