No. |
Part Name |
Description |
Manufacturer |
121 |
2N6104 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
122 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
123 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
124 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
125 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
126 |
2N6105 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
127 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
128 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
129 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
130 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
131 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
132 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
133 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
134 |
2N6105A |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
135 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
136 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
137 |
2N6106 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
138 |
2N6106 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
139 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
140 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
141 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
142 |
2N6107 |
PNP power transistor |
FERRANTI |
143 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
144 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
145 |
2N6107 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
146 |
2N6107 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
147 |
2N6107 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
148 |
2N6107 |
Power 7A 70V Discrete PNP |
ON Semiconductor |
149 |
2N6107 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
150 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| | | |