No. |
Part Name |
Description |
Manufacturer |
121 |
NE538FE |
High Slew Rate Op Amp |
Philips |
122 |
NE538N |
High Slew Rate Op Amp |
Philips |
123 |
NE540L |
Power driver |
Signetics |
124 |
NE5410 |
10-Bit high-speed multiplying D/A converter |
Philips |
125 |
NE5410F |
10-Bit high-speed multiplying D/A converter |
Philips |
126 |
NE542 |
Dual Low-Noise Preamplifier |
Ideal Semiconductor |
127 |
NE542 |
Dual Low-Noise Preamplifier |
Philips |
128 |
NE544 |
Servo Amplifier |
Ideal Semiconductor |
129 |
NE544 |
Servo Amplifier |
Philips |
130 |
NE546 |
AM radio receiver subsystem |
Signetics |
131 |
NE546A |
AM radio receiver subsystem |
Signetics |
132 |
NE550 |
Precision voltage regulator |
Signetics |
133 |
NE5500179A |
SILICON POWER MOS FET |
NEC |
134 |
NE5500179A-T1 |
SILICON POWER MOS FET |
NEC |
135 |
NE550A |
Precision voltage regulator |
Signetics |
136 |
NE550L |
Precision voltage regulator |
Signetics |
137 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
138 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
139 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
140 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
141 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
142 |
NE5512 |
Dual high-performance operational amplifier |
Philips |
143 |
NE5512D |
Dual high-performance operational amplifier |
Philips |
144 |
NE5512N |
Dual high-performance operational amplifier |
Philips |
145 |
NE5514 |
Quad high-performance operational amplifier |
Philips |
146 |
NE5514D |
Quad high-performance operational amplifier |
Philips |
147 |
NE5514N |
Quad high-performance operational amplifier |
Philips |
148 |
NE5514NB |
Quad high-performance operational amplifier |
Philips |
149 |
NE5517 |
Dual Operational Transconductance Amplifier |
ON Semiconductor |
150 |
NE5517 |
Dual operational transconductance amplifier |
Philips |
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