No. |
Part Name |
Description |
Manufacturer |
121 |
MC68HC812A4PV |
16-bit device composed of standard on-chip peripheral modules connected by an intermodule bus. Modules include |
Motorola |
122 |
MCA230 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
123 |
MCA231 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
124 |
MCA235 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
125 |
MDA960-1 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 50V |
Motorola |
126 |
MDA960-2 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 100V |
Motorola |
127 |
MDA960-3 |
2.5Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 200V |
Motorola |
128 |
MDA970-1 |
4Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 50V |
Motorola |
129 |
MDA970-2 |
4Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 100V |
Motorola |
130 |
MDA970-3 |
4Adc Miniature integral diode assemblies diffusion silicon dice interconnected and transfer molded into rectifier circuit 200V |
Motorola |
131 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
132 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
133 |
MSM6242B |
DIRECT BUS CONNECTED CMOS REAL TIME CLOCK/CALENDAR |
OKI electronic components |
134 |
NTE904 |
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) |
NTE Electronics |
135 |
NTE912 |
Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) |
NTE Electronics |
136 |
OA182B |
Germanium small junction diodes quad connected as bridge rectifier |
AEG-TELEFUNKEN |
137 |
OA182R |
Germanium small junction diodes quad connected as ring circuit for modulators and demodulators |
AEG-TELEFUNKEN |
138 |
OSS9110-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
139 |
OSS9110-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
140 |
OSS9210-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
141 |
OSS9210-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
142 |
OSS9310-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
143 |
OSS9310-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
144 |
OSS9410-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
145 |
OSS9410-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
146 |
OTH10-1008L |
Bridge-connected thyristor stacks, single-phase |
Mullard |
147 |
OTH10-608L |
Bridge-connected thyristor stacks, single-phase |
Mullard |
148 |
OTH115-1208 |
Bridge-connected thyristor stacks, single-phase |
Mullard |
149 |
OTH115-608 |
Bridge-connected thyristor stacks, single-phase |
Mullard |
150 |
OTH12-608L |
Bridge-connected thyristor stacks, single-phase |
Mullard |
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