| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N630 |
Silicon Microwave L-X-band Detector |
Motorola |
| 122 |
1N830 |
Silicon Micro-min. UHF Detector |
Motorola |
| 123 |
1N830A |
Silicon Micro-min. UHF Detector |
Motorola |
| 124 |
1N831 |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 125 |
1N831A |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 126 |
1N831B |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 127 |
1N832 |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 128 |
1N832A |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 129 |
1N832B |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 130 |
1N833 |
Silicon Microwave X-band Detector |
Motorola |
| 131 |
1N833A |
Silicon Microwave X-band Detector |
Motorola |
| 132 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 133 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 134 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 135 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 136 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 137 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 138 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 139 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 140 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 141 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 142 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 143 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 144 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 145 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 146 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 147 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 148 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 149 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 150 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
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