| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 122 |
AV131-315 |
HIP3™ Variable Attenuator for AMPS and GSM Base Stations |
Skyworks Solutions |
| 123 |
BB112 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8.0 V) |
Siemens |
| 124 |
BB512 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8 V) |
Siemens |
| 125 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 126 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
| 127 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 128 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 129 |
BSY51 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 130 |
BSY52 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 131 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 132 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 133 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 134 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 135 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 136 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 137 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 138 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 139 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 140 |
BSY86 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 141 |
BSY87 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 142 |
BSY88 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 143 |
BSY90 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 144 |
C2719 |
Photosensor amplifier |
Hamamatsu Corporation |
| 145 |
C6386 |
Photosensor amplifier |
Hamamatsu Corporation |
| 146 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
| 147 |
C9051 |
Photosensor amplifier |
Hamamatsu Corporation |
| 148 |
CGY0819 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) |
Siemens |
| 149 |
CGY81 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) |
Siemens |
| 150 |
CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
Siemens |
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