| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AN-3749 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 122 |
AN5720 |
B/W TV Video Detector AMplifier / IF AGC Circuit |
Matsushita Electric Works(Nais) |
| 123 |
AN5720 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 124 |
AN5722 |
B/W TV Video Detector Amplifier, IF AGC Circuit |
Panasonic |
| 125 |
AN7002K |
Single Chip ICs for AM Radio |
Panasonic |
| 126 |
AN7002S |
Single Chip ICs for AM Radio |
Panasonic |
| 127 |
AN7008K |
Low Voltage Operation Single Chip IC for AM Radio |
Panasonic |
| 128 |
APPLICATION-NOTE |
Block Diagram for entertainmnent equipment for AM radio and AM/FM RADIO |
NEC |
| 129 |
AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 130 |
AT-33225-BLK |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 131 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 132 |
AV131-315 |
HIP3™ Variable Attenuator for AMPS and GSM Base Stations |
Skyworks Solutions |
| 133 |
BB112 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8.0 V) |
Siemens |
| 134 |
BB512 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8 V) |
Siemens |
| 135 |
BF160 |
Silicon Planar NPN transistor - IF amplifier for AM/FM radios |
SGS-ATES |
| 136 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 137 |
BF517 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
| 138 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 139 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 140 |
BSY51 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 141 |
BSY52 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 142 |
BSY53 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 143 |
BSY54 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 144 |
BSY55 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 145 |
BSY56 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 146 |
BSY81 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 147 |
BSY82 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 148 |
BSY83 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 149 |
BSY84 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 150 |
BSY85 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| | | |
