No. |
Part Name |
Description |
Manufacturer |
121 |
FDMS3660S |
30V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Stage |
Fairchild Semiconductor |
122 |
FDMS3664S |
30V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Stage |
Fairchild Semiconductor |
123 |
FDMS3668S |
30V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Stage |
Fairchild Semiconductor |
124 |
FDMS3669S |
30V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Stage |
Fairchild Semiconductor |
125 |
FDMS3686S |
30V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Stage |
Fairchild Semiconductor |
126 |
FDPC8011S |
25V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Clip |
Fairchild Semiconductor |
127 |
FDPC8012S |
25V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Clip |
Fairchild Semiconductor |
128 |
FDPC8013S |
30 V Asymmetric Dual N-Channel MOSFET PowerTrench� Power Clip |
Fairchild Semiconductor |
129 |
FH2114 |
30-90 MHz, RF MOSFET power transformer, 8W, 12V |
MA-Com |
130 |
FH2164 |
30-90 MHz, RF MOSFET power transformer, 8W, 12V |
MA-Com |
131 |
FH2164 |
RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz |
Tyco Electronics |
132 |
HAT1043M |
Silicon P Channel Power MOSFET Power Switching |
Hitachi Semiconductor |
133 |
HAT1044M |
Silicon P Channel Power MOSFET Power Switching |
Hitachi Semiconductor |
134 |
HAT2053M |
Silicon N Channel Power MOSFET Power Switching |
Hitachi Semiconductor |
135 |
HAT2054M |
Silicon N Channel Power MOSFET Power Switching |
Hitachi Semiconductor |
136 |
IR6320G |
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH |
International Rectifier |
137 |
IRF5210S |
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
138 |
IRF5305 |
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
139 |
IRF6893M |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
140 |
IRF6893MTR1PBF |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
141 |
IRF6893MTRPBF |
25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance. |
International Rectifier |
142 |
IRF720CF |
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC |
New Jersey Semiconductor |
143 |
IRF731 |
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
New Jersey Semiconductor |
144 |
IRF732 |
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
New Jersey Semiconductor |
145 |
IRF733 |
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
New Jersey Semiconductor |
146 |
IRF9150 |
Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
147 |
IRF9151 |
Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
148 |
IRF9230 |
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
149 |
IRF9240 |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
150 |
IRF9640 |
Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| | | |