| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1SS373 |
DIODE (HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 122 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 123 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 124 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 125 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 126 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 127 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 128 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 129 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 130 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 131 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 132 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 133 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 134 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 135 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 136 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 137 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 138 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 139 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 140 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 141 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 142 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
| 143 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 144 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 145 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 146 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 147 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 148 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 149 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 150 |
2N1300 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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