| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 122 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 123 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 124 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 125 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 126 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
ST Microelectronics |
| 127 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 128 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 129 |
2N1711 |
Silicon NPN Planar Transistor for general and AF amplifiers |
AEG-TELEFUNKEN |
| 130 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 131 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 132 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 133 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
| 134 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 135 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 136 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 137 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 138 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 139 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 140 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 141 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 142 |
2N1991 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 143 |
2N2049 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 144 |
2N2060 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 145 |
2N2060 |
NPN silicon dual amplifier transistor. |
Motorola |
| 146 |
2N2060 |
Silicon transistor differential amplifiers |
SGS-ATES |
| 147 |
2N2060A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 148 |
2N2060A |
DUAL AMPLIFIER TRANSISTOR |
SemeLAB |
| 149 |
2N2060A |
Silicon transistor differential amplifiers |
SGS-ATES |
| 150 |
2N2102 |
AMPLIFIER TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
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