No. |
Part Name |
Description |
Manufacturer |
121 |
29F200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory |
ST Microelectronics |
122 |
2N5006 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
123 |
2N5008 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
124 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
125 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
126 |
2N6052 |
Power 12A 100V Darlington PNP |
ON Semiconductor |
127 |
2N6081 |
NPN silicon RF power transistor 12.5V 15W 175MHz |
Motorola |
128 |
2N6084 |
NPN silicon RF power transistor 12.5V 40W 175MHz |
Motorola |
129 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
130 |
2SC2106 |
Silicon NPN epitaxial planar UHF band power transistor 12W |
TOSHIBA |
131 |
2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
132 |
2SC4257 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
133 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
134 |
2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
135 |
2SD1953 |
NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications |
SANYO |
136 |
30KP120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
137 |
30KP120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
138 |
30KP120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
139 |
30KP120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
140 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
141 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
142 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
143 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
144 |
40934 |
High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications |
RCA Solid State |
145 |
5962-02548 |
66W -120W Total Output Power 120 Vin +3.3 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02548 |
International Rectifier |
146 |
5962-02549 |
66W -120W Total Output Power 120 Vin +8 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02549 |
International Rectifier |
147 |
5962-02550 |
66W -120W Total Output Power 120 Vin +9 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02550 |
International Rectifier |
148 |
5962-02551 |
66W -120W Total Output Power 120 Vin +12 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02551 |
International Rectifier |
149 |
5962-02552 |
66W -120W Total Output Power 120 Vin +15 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02552 |
International Rectifier |
150 |
5962-02553 |
66W -120W Total Output Power 120 Vin +28 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02553 |
International Rectifier |
| | | |