No. |
Part Name |
Description |
Manufacturer |
121 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
122 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
123 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
124 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
125 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
126 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
127 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
128 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
129 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
130 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
131 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
132 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
133 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
134 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
135 |
1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
136 |
19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package |
International Rectifier |
137 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
138 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
139 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
140 |
1DI200Z-100 |
POWER TRANSISTOR MODULE |
Fuji Electric |
141 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
142 |
1DI200Z-120 |
POWER TRANSISTOR MODULE |
Fuji Electric |
143 |
1DI300A120 |
Power Transistor Module |
Fuji Electric |
144 |
1DI300A140 |
Power Transistor Module |
Fuji Electric |
145 |
1DI300D100 |
Power Transistor Module |
Fuji Electric |
146 |
1DI300M-050 |
Power Transistor Module |
Fuji Electric |
147 |
1DI300M-120 |
Power Transistor Module |
Fuji Electric |
148 |
1DI300MN-050 |
Power Transistor Module |
Fuji Electric |
149 |
1DI300MN-120 |
Power Transistor Module |
Fuji Electric |
150 |
1DI300MP-120 |
Power Transistor Module |
Fuji Electric |
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