No. |
Part Name |
Description |
Manufacturer |
121 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
122 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
123 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
124 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
125 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
126 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
127 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
128 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
129 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
130 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
131 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
132 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
133 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
134 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
135 |
2SC497 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
136 |
2SC498 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
137 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
138 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
139 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
140 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
141 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
142 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
143 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
144 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
145 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
146 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
147 |
54F403 |
First-In First-Out (FIFO) Buffer Memory |
Fairchild Semiconductor |
148 |
54F413 |
64x4 First-In First-Out Buffer Memory With Serial and Parallel I/O |
Fairchild Semiconductor |
149 |
54F413 |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
150 |
54F413D-CQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
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