No. |
Part Name |
Description |
Manufacturer |
121 |
FRF250D |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
122 |
FRF250H |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
123 |
FRF250R |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
124 |
FRF254D |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
125 |
FRF254H |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
126 |
FRF254R |
17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
127 |
HD6417750RF200 |
1.5V; 200MHz; 32-bit RISC microprocessor |
Hitachi Semiconductor |
128 |
HD6417750RF240 |
1.5V; 240MHz; 32-bit RISC microprocessor |
Hitachi Semiconductor |
129 |
HRF22 |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
130 |
IRF200 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
131 |
IRF200S100RJ |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
132 |
IRF220 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
133 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
134 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
135 |
IRF220 |
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
136 |
IRF220 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
137 |
IRF220-223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
138 |
IRF2204 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
139 |
IRF2204L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
140 |
IRF2204LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
141 |
IRF2204PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
142 |
IRF2204S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
143 |
IRF2204SPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
144 |
IRF221 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
145 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
146 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
147 |
IRF221 |
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
148 |
IRF221 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
149 |
IRF222 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
150 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
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