| No. |
Part Name |
Description |
Manufacturer |
| 121 |
RM50 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 122 |
RM500DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 123 |
RM500DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 124 |
RM500DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 125 |
RM500DZ-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 126 |
RM500DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 127 |
RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 128 |
RM500DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 129 |
RM500HA-24 |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 130 |
RM500HA-2H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 131 |
RM500HA-H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 132 |
RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 133 |
RM500UZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 134 |
RM500UZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 135 |
RM500UZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 136 |
RM500UZ-2H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 137 |
RM500UZ-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 138 |
RM500UZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 139 |
RM500UZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 140 |
RM500UZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 141 |
RM50C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 142 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 143 |
RM50CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 144 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 145 |
RM50CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 146 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 147 |
RM50D2Z-40 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 148 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 149 |
RM50DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 150 |
RM50DA-C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
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