No. |
Part Name |
Description |
Manufacturer |
121 |
DS3906U+ |
Triple NV Low Step Size Variable Resistor Plus Memory |
MAXIM - Dallas Semiconductor |
122 |
DS3906U+T&R |
Triple NV Low Step Size Variable Resistor Plus Memory |
MAXIM - Dallas Semiconductor |
123 |
DS4520 |
9-Bit I2C Nonvolatile I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
124 |
DS4520E |
9-Bit I2C Nonvolatile I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
125 |
DS4520E+ |
9-Bit I²C Nonvolatile I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
126 |
DS4520E+TRL |
9-Bit I²C Nonvolatile I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
127 |
DS4520E_T_R |
9-bit I2C nonvolatile I/O expander plus memory |
MAXIM - Dallas Semiconductor |
128 |
DS4550 |
I²C and JTAG Nonvolatile 9-Bit I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
129 |
DS4550E |
2.7 to 5.5 V, I2C and JTAG nonvolatile 9-bit I/O expander plus memory |
MAXIM - Dallas Semiconductor |
130 |
DS4550E+ |
I²C and JTAG Nonvolatile 9-Bit I/O Expander Plus Memory |
MAXIM - Dallas Semiconductor |
131 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
132 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
133 |
FDQ106 |
Read/write random access memory 128-bit, 64-word, 2 bit per word |
Mullard |
134 |
GE28F128L18B85 |
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory |
Intel |
135 |
GE28F128L18T85 |
1.8V, 85ns, 128Mbit StrataFlash Wireless Memory |
Intel |
136 |
GE28F256L18B85 |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory |
Intel |
137 |
GE28F256L18T85 |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory |
Intel |
138 |
GE28F640L18B85 |
1.8V, 85ns, 64Mbit StrataFlash Wireless Memory |
Intel |
139 |
GE28F640L18T85 |
1.8V, 85ns, 64Mbit StrataFlash Wireless Memory |
Intel |
140 |
GM76C88AL |
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS |
etc |
141 |
GXB100473 |
Static ECL random access memory (RAM) 256 bits |
Siemens |
142 |
GXB100475 |
Static ECL random access memory (RAM) 4096 bits |
Siemens |
143 |
GXB10147A |
Static ECL random access memory (RAM) capacity 128 bits |
Siemens |
144 |
GXB10415 |
Static ECL random access memory (RAM) 1024 bits |
Siemens |
145 |
GYQ101 |
1024-bit read/write random access memory |
Mullard |
146 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
147 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
148 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
149 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
150 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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