No. |
Part Name |
Description |
Manufacturer |
121 |
HCTS160D |
Radiation Hardened Synchronous Counter |
Intersil |
122 |
HCTS160DMSR |
Radiation Hardened Synchronous Counter |
Intersil |
123 |
HCTS160DTR |
Radiation Hardened Synchronous Counter |
Intersil |
124 |
HCTS160HMSR |
Radiation Hardened Synchronous Counter |
Intersil |
125 |
HCTS160K |
Radiation Hardened Synchronous Counter |
Intersil |
126 |
HCTS160KMSR |
Radiation Hardened Synchronous Counter |
Intersil |
127 |
HCTS160KTR |
Radiation Hardened Synchronous Counter |
Intersil |
128 |
HCTS160MS |
Radiation Hardened Synchronous Counter |
Intersil |
129 |
HCTS160T |
Radiation Hardened Synchronous Counter |
Intersil |
130 |
HD74LS160 |
Synchronous Decade Counters(direct clear) |
Hitachi Semiconductor |
131 |
HD74LS160A |
Synchronous Decade Counters |
Hitachi Semiconductor |
132 |
HD74LS160A |
Synchronous Decade Counter with Direct Clear |
Hitachi Semiconductor |
133 |
HS160 |
5 V, +/-100 ppm, TTL crystal clock oscillator |
NEL Frequency Controls |
134 |
IS1604 |
OPIC Light Detector for 4 times Speed CD-ROM Drive |
SHARP |
135 |
K4S160822D |
1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
136 |
K4S160822DT-G/F10 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
137 |
K4S160822DT-G/F7 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
138 |
K4S160822DT-G/F8 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
139 |
K4S160822DT-G/FH |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
140 |
K4S160822DT-G/FL |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
141 |
KDS160 |
Switching Diode |
Korea Electronics (KEC) |
142 |
KDS160E |
Switching Diode |
Korea Electronics (KEC) |
143 |
KDS160F |
Silicon Epitaxial Planar Diode |
Korea Electronics (KEC) |
144 |
KDS160V |
Silicon Epitaxial Planar Diode |
Korea Electronics (KEC) |
145 |
KM44S16030BT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
146 |
KM44S16030BT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
147 |
KM44S16030BT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
148 |
KM44S16030BT-G_FL |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
149 |
KM44S16030CT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
150 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
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