| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SD687 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 122 |
2SD688 |
Silicon NPN epitaxial darlington medium power, low frequency transistor |
TOSHIBA |
| 123 |
2SD688 |
SILICON NPN EPITAXIAL (PCT PROCESS) |
TOSHIBA |
| 124 |
2SD689 |
Silicon NPN epitaxial darlington low frequency medium power transistor |
TOSHIBA |
| 125 |
2SD691 |
Si NPN diffused junction mesa. High power amplifier. |
Panasonic |
| 126 |
2SD692 |
Si NPN diffused junction mesa. High power amplifier. |
Panasonic |
| 127 |
2SD693 |
Si NPN triple diffused mesa. High power switching. |
Panasonic |
| 128 |
2SD697A |
SILICON NPN TRIPLE DIFFUSED MEGA TYPE |
TOSHIBA |
| 129 |
2SD698 |
Silicon NPN triple diffused MESA darlington high power switching transistor |
TOSHIBA |
| 130 |
30LVSD68 |
AC Line Rated Disc Capacitors |
Vishay |
| 131 |
AOSD62666E |
Dual MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
| 132 |
CMSD6263 |
SUPERmini. SURFACE MOUNT SCHOTTKY DIODES |
Central Semiconductor |
| 133 |
CMSD6263A |
SUPERmini. SURFACE MOUNT SCHOTTKY DIODES |
Central Semiconductor |
| 134 |
CMSD6263C |
SUPERmini. SURFACE MOUNT SCHOTTKY DIODES |
Central Semiconductor |
| 135 |
CMSD6263S |
SUPERmini. SURFACE MOUNT SCHOTTKY DIODES |
Central Semiconductor |
| 136 |
CSD611 |
2.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
| 137 |
CSD655 |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
Continental Device India Limited |
| 138 |
CSD655D |
0.500W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.700A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 139 |
CSD655E |
0.500W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.700A Ic, 300 - 800 hFE |
Continental Device India Limited |
| 140 |
CSD655F |
0.500W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.700A Ic, 600 - 1200 hFE |
Continental Device India Limited |
| 141 |
CSD667 |
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 60 - 320 hFE |
Continental Device India Limited |
| 142 |
CSD667A |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 200 hFE |
Continental Device India Limited |
| 143 |
CSD667AB |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
| 144 |
CSD667AC |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 145 |
CSD667B |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
| 146 |
CSD667C |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 147 |
CSD667D |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 160 - 320 hFE |
Continental Device India Limited |
| 148 |
CSD669 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 149 |
CSD669A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 150 |
CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
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