| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N5616GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V |
Vishay |
| 122 |
1N5617GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 400V |
Vishay |
| 123 |
1N5618GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V |
Vishay |
| 124 |
1N5619GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 600V |
Vishay |
| 125 |
1N5620GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V |
Vishay |
| 126 |
1N5621GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 800V |
Vishay |
| 127 |
1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 128 |
1N5623GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V |
Vishay |
| 129 |
1N5817 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 130 |
1N5818 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 131 |
1N5819 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 132 |
1N5820 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere |
Chenyi Electronics |
| 133 |
1N5821 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere |
Chenyi Electronics |
| 134 |
1N5822 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere |
Chenyi Electronics |
| 135 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
| 136 |
1N659 |
General purpose low diode. Working inverse voltage 50V. |
Fairchild Semiconductor |
| 137 |
1N660 |
General purpose low diode. Working inverse voltage 100V. |
Fairchild Semiconductor |
| 138 |
1N661 |
General purpose low diode. Working inverse voltage 200V. |
Fairchild Semiconductor |
| 139 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 140 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 141 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
| 142 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 143 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 144 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 145 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 146 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 147 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 148 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 149 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 150 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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