No. |
Part Name |
Description |
Manufacturer |
121 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
122 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
123 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
124 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
125 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
126 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
127 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
128 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
129 |
27128 |
NMOS 128K 16K x 8 UV EPROM |
SGS Thomson Microelectronics |
130 |
27C1024 |
1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
131 |
27C160 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
132 |
27C4001 |
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
133 |
27C512 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
134 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
135 |
29F002 |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
136 |
29F010 |
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
137 |
29F040 |
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
138 |
2N1132A |
Transistor |
SGS-ATES |
139 |
2N1420 |
Transistor |
SGS-ATES |
140 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
141 |
2N1613 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
142 |
2N1613 |
Transistor |
SGS-ATES |
143 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
144 |
2N1711 |
SWITCHES AND UNIVERSAL AMPLIFIERS |
SGS Thomson Microelectronics |
145 |
2N1711 |
Transistor |
SGS-ATES |
146 |
2N1889 |
Transistor |
SGS-ATES |
147 |
2N1890 |
Transistor |
SGS-ATES |
148 |
2N1893 |
GENERAL PURPOSE HIGH-VOLTAGE TYPE |
SGS Thomson Microelectronics |
149 |
2N1893 |
Transistor |
SGS-ATES |
150 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
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