No. |
Part Name |
Description |
Manufacturer |
121 |
32170 |
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
122 |
3802 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
123 |
3820 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
124 |
3850 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
125 |
3886GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
126 |
38C1 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
127 |
38C2 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ |
Mitsubishi Electric Corporation |
128 |
653SEA2MXX |
Optoelectronics - WDM- DWDM |
Mitsubishi Electric Corporation |
129 |
74273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
130 |
74LS |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
131 |
74LS244 |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
132 |
74LS273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
133 |
7531 GROUP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
134 |
7531 GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
135 |
AL-402 |
Infrared Emitting Diodes(GaAlAs) |
Kodenshi Corp |
136 |
AL-402 |
Infrared Emitting Diodes(GaAlAs) |
Kondenshi Corp |
137 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
138 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
139 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
140 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
141 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
142 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
143 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
144 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
145 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
146 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
147 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
148 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
149 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
150 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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