No. |
Part Name |
Description |
Manufacturer |
121 |
DTC144TT1-D |
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network |
ON Semiconductor |
122 |
EFT124 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
123 |
EFT125 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
124 |
EFT130 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
125 |
EFT131 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
126 |
EFT212 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
127 |
EFT213 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
128 |
EFT214 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
129 |
EFT238 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
130 |
EFT239 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
131 |
EFT240 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
132 |
EFT250 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
133 |
EFT306 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
134 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
135 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
136 |
EFT317 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
137 |
EFT319 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
138 |
EFT320 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
139 |
EFT321 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
140 |
EFT322 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
141 |
EFT323 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
142 |
EFT351 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
143 |
EFT352 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
144 |
EFT353 |
Transistor with PNP junctions with germanium, low frequency 200mW |
IPRS Baneasa |
145 |
ERU5TBJ100 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
146 |
ERU5TBJ101 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
147 |
ERU5TBJ110 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
148 |
ERU5TBJ111 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
149 |
ERU5TBJ120 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
150 |
ERU5TBJ121 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
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