| No. |
Part Name |
Description |
Manufacturer |
| 121 |
STEVAL-IME003V1 |
Demonstration board based on the STHV748 high voltage pulser |
ST Microelectronics |
| 122 |
STEVAL-IME008V1 |
Product evaluation boards for medical based on the STHV749 |
ST Microelectronics |
| 123 |
STEVAL-IME009V1 |
Product evaluation boards for medical based on the STHV800 |
ST Microelectronics |
| 124 |
STH10NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 125 |
STH10NA50FI |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 126 |
STH10NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 127 |
STH10NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 128 |
STH10NC60FI |
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 129 |
STH10NC60FI |
N - CHANNEL 600V - 0.65Ohms - 10A - TO-247/ISOWATT218 PowerMESH II MOSFET |
SGS Thomson Microelectronics |
| 130 |
STH10NC60FI |
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET |
ST Microelectronics |
| 131 |
STH10NK60ZFI |
N-CHANNEL 600V 0.65 OHM 10A ZENER-PROTECTED SUPERMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 132 |
STH110N10F7-2 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 133 |
STH110N10F7-6 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 134 |
STH12N120K5-2 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 135 |
STH12NA60 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 136 |
STH12NA60FI |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 137 |
STH12NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 138 |
STH12NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 139 |
STH130N10F3-2 |
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 140 |
STH13NB60 |
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET |
ST Microelectronics |
| 141 |
STH13NB60FI |
N - CHANNEL 600V - 0.48W - 13A - TO-247/ISOWATT218 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 142 |
STH13NB60FI |
N-CHANNEL 600V - 0.48 OHM - 13A - TO-247/ISOWATT218 POWERMESH MOSFET |
ST Microelectronics |
| 143 |
STH140N8F7-2 |
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 144 |
STH150N10F7-2 |
N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 145 |
STH15NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 146 |
STH15NA50FI |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 147 |
STH15NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 148 |
STH15NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 149 |
STH15NB50FI |
N-CHANNEL 500V - 0.33W - 14.6A -T0- 247/ISOWATT218 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 150 |
STH15NB50FI |
N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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